WTN1A80
Electrical Characteristics
(Tc=25℃ unless otherwise noted)
Symbol
I
DRM
Current
V
TM
Peak On-State Voltage
Wave T
J
=125℃
I
T
=35A,Inst.Measurement
T2+G+
T2+G-
I
GT
Gate Trigger Current
V
D
=12V,R
L
=100Ω
T2-G-
T2-G+
T2+G+
T2+G-
V
GT
Gate Trigger Voltage
V
D
=12V,R
L
=100Ω
T2-G-
T2-G+
V
GD
Non-Trigger Gate Voltage
Critical
dv/dt
Off-State
Voltage at Commutation
I
H
Holding Current
V
D
=12V, I
GT
=0.1A
T2+G+
T2+G-
I
L
Latching current
V
D
=12V,I
G
T=0.1A
T2-G-
T2-G+
I
TM
=1.5A,V
DM
=V
DRM(MAX)
,
tgt
Gate controlled turn-on time
I
G
=0.1A,dI
G
/dt=5A/µs
-
2
-
µs
-
-
1.0
2.5
8
5
-
-
-
1.3
1.2
4.0
5
5
5
mA
mA
Rate
of
Rise
T
J
=125℃,V
D
=V
DRM,
R
L
=3.3KΩ
V
D
=67%V
DRM(MAX)
T
J
=125℃,R
GK
=1KΩ
10
20
-
V/
µs
-
-
0.2
-
-
-
1.5
1.5
-
V
-
-
-
-
1.4
3.8
-
-
5
7
1.5
1.5
V
-
-
-
1.2
0.4
1.3
1.5
5
5
mA
V
Items
Repetitive Peak Off-State
conditions
V
D
=V
DRM
,Single Phase, Half
Ratin
Min
-
Typ
0.1
Max
0.5
Unit
mA
2/4
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
