WTN1A80
Bi-Directional Triode Thyristor
Features
■
Repetitive Peak off-State Voltage:800V
■
R.M.S On-State Current(IT(RMS)=1A
■
Low on-state voltage: VTM=1.2(typ.)@ ITM
■
Low reverse and forward blocking current:
IDRM=500uA@TC=125℃
■
Low holding current: IH=4mA (typ.)
■
High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings
(T
J
=25℃ unless otherwise specified)
symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
condition
Tc=86℃
Full sine wave, 20/16.7ms
Ratings
800
1
12.5/13.8
1.28
5.0
0.5
2.0
5
125
-40~150
Units
V
A
A
A
2
s
W
W
A
V
℃
℃
Thermal Characteristics
Symbol
R
θJc
Parameter
Thermal Resistance Junction to Case
Value
60
Units
℃/W
Rev.A Aug.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
