WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
Reverse Recovery Circuit
VR=200V
0.01Ω
L=70µH
D.U.T
D
di
F
/dt
ADJUST
IRFP250
G
S
Fig.8 Reverse Recovery Parameter Test Circuit
3
trr
IF
tb
t a
0
4
Q rr
2
IR R M
0.5IR R M
5
di(rec)M/dt
0.75IR R M
1
diF/dt
1.diF/dt-Rate of change of current though zero
crossing
4.Qrr-Area under curve defined by trr
and IR R M
2.IR R M -Peak reverse recovery current
3.trr-Reverse recovery time measured from zero
crossing point of negative going I Fto point where
a line passing through 0.75 I RRMand 0.50 I RRM
extrapolated to zero current
Qrr=trr IX RRM
2
5.di(rec)M/dt-Peak rate of change of
current during tb portion of trr
Fig.9 Reverse Recovery Waveform and Definitions
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com
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