WSAD92-02N Product Description
20A,200V Ultrafast Dual Diode
1 8 0
1 7 0
3 0 0
1 0 0
D C
1 6 0
5 0
3 0
1 5 0
Square wave (D=0.50)
Rated Vr appllied
1 4 0
see note(1)
1 3 0
1 0
0
3
6
9
1 2
1 5
1
3
5
1 0
3 0
time(at 50Hz)
Average Forward Current-I F(AV)(A)
Fig.6 Surge Capability
Fig.5 Case Temperature vs Out Current
1000
1 0 0
1 0
TJ=25°C
1
1 0
1 0 0
1000
Reverse Voltage-VR(V)
Fig.7 Junction Capacitance Characteristics
(1) Formula used:Tc=TJ-(Pd+PdREV)×Rthjc;
Pd=Forward Power Loss=IF(AV)×VFM@(IF(AV)/D） (see Fig.3)
PdREV=Inverse Power Loss=VR1×IR(1-D); IR@VR1=rated VR
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com
Tel : +86-755-8250 6288
Fax : +86-755-8250 6299
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WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
