WFY3P02
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current(Note 4)
Drain cut−off current(Note 4)
Drain−source breakdown voltage
Gate threshold voltage
Symbol
Test Condition
VGS = ±8 V, VDS = 0 V
VDS = -16 V, VGS = 0 V
ID = -250 μA, VGS = 0 V
VDS = VDS, ID =-250 μA
VGS = −4.5 V, ID = −2.8 A
VGS = −2.5 V, ID = −2.0 A
VDS = −5.0 V, ID = −2.8 A
VDS = -6 V,
Min
Type
-
Max
Unit
nA
μA
V
IGSS
-
-
±100
IDSS
-
-1.0
V(BR)DSS
VGS(th)
-20
-0.40
-
-
-
-
-1.5
V
95
122
6.5
477
80
127
5
130
Drain−source ON resistance
RDS(ON)
mꢀ
150
Forward Transconductance
Input capacitance
gfs
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
Reverse transfer capacitance
Output capacitance
VGS = 0 V,
pF
ns
f = 1 MHz
Turn-on Delay time
VGS = −4.5 V,
Switching
Turn−on Rise time
time
19
95
65
5.4
0.8
1.1
-
VDS = −6 V,
ID = −1.0 A,
Turn-off Delay time
td(off)
tf
-
(Note 5)
RG = 6.0 ꢀ, RL=6ꢀ,
Turn−off Fall time
Total gate charge
-
8.5
-
Qg
VGS = −4.5 V,
VDS = −10 V,
ID = −2.8 A
Gate−source charge
Qgs
Qgd
nC
Gate−drain (“miller”) Charge
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
Test Condition
Min Type Max Unit
IDR
-
-
-
-
-
-1.6
-7.5
-1.2
A
A
V
IDRP
-
-
VDSF
IDR = -1.6A, VGS = 0 V
-0.82
Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/5
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
