WFY3P02
−20V,
P−Channel MOSFET
,
Features
■
-3.2A, -20V, R
DS(on)
(Max 130mΩ)@V
GS
=-4.5V
■ −1.8
V Rated for Low Voltage Gate Drive
■
SOT-23 Surface Mount for Small Footprint
■
Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
G
S
D
SOT-23
Marking: H03F
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Drain Source Voltage
Continuous Drain Current(Note 1)
Steady State
t≤10s
Steady State
t≤10s
Steady State
t=10s
C=100pF,R
S
= 1500Ω
Tc=25℃
Tc=85℃
Tc=25℃
Tc=25℃
Tc=25℃
Tc=85℃
Tc=25℃
Parameter
Value
-20
−2.8
-1.7
-3.2
0.80
1.25
-1.8
-1.3
0.42
-7.5
±8
225
-55~150
260
Units
V
A
P
D
I
D
P
D
I
DM
V
GS
ESD
T
J,
T
stg
T
L
Total Power Dissipation(Note 1)
Continuous Drain Current(Note 2)
Total Power Dissipation(Note 2)
Drain Current Pulsed
Gate to Source Voltage
ESD Capability (Note 3)
Junction and Storage Temperature
W
A
W
A
V
V
℃
℃
Maximum lead Temperature for soldering purposes
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
R
QJA
R
QJA
R
QJA
Parameter
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min
-
Typ
-
Max
170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010-H03F
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P03-3