WFSA6503
N-Channel Electrical Characteristics at Ta=250C
Ratings
Unit
Parameter
Symbol
Conditions
min typ max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
V(BR)DSS
IDSS
ID=250uA, VGS=0V
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
VDS= VGS, ID=250uA
ID=6.9A, VGS=10V
ID=5A, VGS=4.5V
VDS=15V,
30
-
-
V
uA
nA
V
-
-
-
1
IGSS
VGS(th)
RDS(ON)
RDS(ON)
Ciss
-
+100
2.0
25
40
820
-
1.0
-
1.6
17
mΩ
mΩ
Static Drain-to-Source On-State Resistance
-
24
Input Capacitance
-
680
102
77
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS=0V,
-
pF
f=1MHz
-
-
td(on)
tr
td(off)
tf
-
4.6
4.1
20.6
5.2
6.74
1.82
3.2
0.76
7
VGS=10V,
VDS=15V,
RL=2.2Ω,
RGEN=3Ω
-
6
nS
Turn-off Delay Time
Fall Time
-
30
8
-
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
-
8.1
-
VDS=15V,
Qgs
VGS=10V,
ID=6.9A
-
nC
V
Qgd
-
-
VSD
IS=1A, VGS=0V
-
1.3
2/10
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
