WFSA6503
N- Channel and P-Channel Silicon MOSFETs
Features
■
Low
On-resistance.
■
Composite type with an N-channel MOSFET and a
P-channel MOSFET driving from a 4.5V/-4.5V
supply voltage contained in a single package.
■
High-density mounting.
■
RoHS compliant.
SOP-8
Applications
■
General-Purpose Switching Device
■
For motor drives, inverters.
Absolute Maximum Ratings
at Ta=250C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
Conditions
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
PW≤10uS, duty cycle≤1%
Mounted on a ceramic board
(1000mm
2
×0.8mm) 1unit
Mounted on a ceramic board
(1000mm
2
×0.8mm)
Maximum
Temperature
Storage Temperature Range
Junction
Ratings
N-Ch
30
±20
6.9
30
1.3
P-Ch
-30
±20
-6
-30
1.3
Unit
V
V
A
A
W
Total Dissipation
P
T
1.7
1.7
W
0
Channel Temperature
Storage Temperature
T
ch
T
stg
150
-55~+150
0
C
C
Rev.A Feb.2012
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