WCPA25C60
Electrical Characteristics
(T
C
=25
℃,
unless otherwise noted)
Symbol
I
DRM
V
TM
I
GT
V
GT
V
GD
Parameter
Repetitive Peak Off-State Current
Test Conditions
V
AK
=V
DRM
T
C
=25℃
T
C
=125℃
Value
Min Typ Max
-
-
-
3
-
0.2
-
-
1.3
-
-
-
5
2
1.6
25
1.3
-
Units
μA
mA
V
mA
V
V
Peak On-State Voltage (1)
Gate Trigger Current (2)
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage (1)
I
TM
=38A, tp=380㎲
V
D
=12V,R
L
=30Ω
T
C
=25℃
V
D
=12V,R
L
=30Ω
T
C
=25℃
V
D
=V
DRM
,R
L
=3.3KΩ
T
J
=125℃
Linear slope up to
V
D
=2/3V
DRM
, gate open
T
J
=125℃
I
T
=500mA, Gate Open
T
C
=25℃
I
G
=1.2I
GT
dv/dt
Critical Rate of Rise Off-State Voltage
800
-
-
V/㎲
I
H
I
L
Holding Current
Dynamic resistance
-
-
50
60
mA
mA
*Notes:
1 Pulse Width ≤1.0ms,Duty cycle≤1%
2 R
GK
Current is not Included in measurement.
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
