欢迎访问ic37.com |
会员登录 免费注册
发布采购

WCPA25C60 参数 Datasheet PDF下载

WCPA25C60图片预览
型号: WCPA25C60
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器器 [Silicon Controlled Rectifiers]
分类和应用: 可控硅整流器
文件页数/大小: 5 页 / 444 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
 浏览型号WCPA25C60的Datasheet PDF文件第2页浏览型号WCPA25C60的Datasheet PDF文件第3页浏览型号WCPA25C60的Datasheet PDF文件第4页浏览型号WCPA25C60的Datasheet PDF文件第5页  
WCPA25C60
Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage:600V
R.M.S On-State Current (IT
(RMS)
=25A)
Low On-State Voltage(1.3V(Typ.)@I
TM
)
Non-isolaed Type
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings
(T
J
= 25°C unless otherwise specified)
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Non Repetitive Surge Peak on-state Current
Condition
Half Sine Wave:T
C
=102°C
180°conduction Angle
tp=10ms
tp=8.3ms
Value
600
16
25
300
Units
V
A
A
A
314
450
50
20
A
2
s
A/㎲
W
W
A
V
°C
°C
I
2
t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
t=10ms
Over any 20ms period
1
5
5
-40~125
-40~150
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Min
-
-
Value
Typ
-
-
Max
1.0
60
Units
℃/W
℃/W
Rev.A Oct.2010