SFP50N06R
Electrical Characteristics TC=25℃
Characteristics
Drain-Source
Symbol
Test Conditions
VGS=0V,
Min Typ
Max Units
BVDSS
60
-
-
V
Breakdown Voltage
Breakdown Voltage Temperature
coefficient
ID=250uA
△BVDSS/△ ID=250uA,
-
0.07
-
V/℃
TJ
referenced to 25℃
Drain-source Leakage Current
IDSS
VDS=60V,VGS=0V
VDS=48V,TC=125℃
VGS=20V,VDS=0V
VGS=-20V,VDS=0V
-
-
-
-
-
-
-
-
10
uA
uA
nA
nA
100
100
-100
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
Gate Threshold Voltage
IGSS
VGS(th)
VDS=VGS,
2.0
-
-
4.0
V
ID=250uA
Static Drain-Source On-state
Resis-tance
RDS(ON)
VGS=10V,
0.018
0.022
Ω
ID=25.0A
Input Capacitance
Ciss
Coss
Crss
td(on)
tr
VGS=0V,VDS=25V,
f=1MHz
-
-
-
-
-
-
-
-
-
-
1050
460
70
1365
600
90
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
ns
VDD=30V,
20
50
ID=25.0A,RG=25Ω
Pulse Width≤300us,
Q>50
100
80
210
170
180
42
Turn-off Delay Time
Fall Time
td(off)
tf
85
Total Gate Charge
Gate-source Charge
Gate-Drain Charge(Miller Charge)
Qg
VDS=48V,
VGS=10V,
ID=50A
32
Qgs
Qgd
8
-
nC
12
-
Source-Drain Ratings and Characteristics
Characteristics
Symbol
Test Conditions
Min Typ
Max Units
Maximum Continuous Source-
Diode Forward Current
Maximum Pulsed Source-Diode
Forward Current
IS
-
-
-
50
A
ISM
-
-
-
200
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
IS=50A,VGS=0V
IS=50A,VGS=0V,
dIF/dt=100A/us
-
-
-
-
1.5
V
50
70
-
-
ns
uC
Qrr
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=230uH,IAS=50A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤50A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
2/7
Steady, all for your advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
