SFP50N06R
Silicon N-Channel MOSFET
Features
�½
�½
�½
R
DS(on)
(Max0.023Ω)@V
GS
=10V
Gate Charge(Typical 25nC)
Maximum Junction Temperature Range(175℃)
General Description
This Power MOSFET is produced using Winsemi’s trench layout-based
process. This technology improves the performances compared with
standard parts from various sources . All of these power
are designed for applications in switching regulators ,
MOSFET
switching
convertors , motor and relay drivers , and drivers for high power bipolar
switching transistors demanding high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@T
C
=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above25℃
T
STG
T
J
Operating Junction Temperature
Storage Temperature
0.8
-55~175
150
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
=25℃)
35
200
±20
493
12.0
7.0
120
A
A
V
mJ
mJ
V/ns
W
Parameter
Drain to Source Voltage
Continuous Drain Current(@T
C
=25℃)
Value
60
50
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QJA
R
QJA
parameter
Min.
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
-
-
-
Value
Typ. Max.
-
0.5
-
1.24
-
62.5
units
℃/W
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
