SBP13009-K
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Value
Units
Symbol
Parameter
TestConditions
Min Typ Max
Collector-Emitter Breakdown Voltage
Ic=10mA,Ib=0
400
-
-
V
VCEO(sus)
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
0.5
2.0
2.5
-
-
V
VCE(sat)
Collector -Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
Tc=100℃
-
-
-
-
-
-
-
-
2.0
V
V
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
1.2
1.6
VBE(sat)
Base -Emitter Saturation Voltage
Ic=8.0A,Ib=1.6A
Tc=100℃
1.5
V
Collector -Base Cutoff Current
(Vbe=-1.5V)
Vcb=700V
1.0
5.0
ICBO
mA
Vcb=700V,Tc=100℃
Vce=5V,Ic=5.0A
Vce=5V,Ic=8.0A
8
5
-
-
40
40
hFE
DC Current Gain
Resistive Load
Storage time
Fall Time
VCC=125V,Ic=6.0A
IB1=1.6A,IB2=-1.6A
TP=25µs
1.5
3.0
0.4
ts
tf
µs
µs
0.17
Inductive Load
Storage Time
Fall Time
VCC=15V,Ic=5A
IB1=1.6A,Vbe(off)=5V
L=0.35mH,Vclamp=300
V
-
-
0.8
2.0
0.1
ts
tf
0.04
Inductive Load
Storage Time
Fall Time
VCC=15V,Ic=1A
-
-
0.8
2.5
IB1=0.4A,Vbe(off)=5V
L=0.2mH,Vclamp=300V
Tc=100℃
ts
tf
µs
0.05
0.15
Note:
Pulse Test : Pulse Width300,Duty cycle 2%
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
