SBP13009-K
HighVoltageFast-SwitchingNPNPowerTransistor
Features
■
Very High Switching Speed
■
High Voltage Capability
■
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
Switching
characteristics required such as
lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
Total Dissipation at Ta*=25℃
T
J
T
STG
Operation Junction Temperature
Storage Temperature
2.2
-40~150
-40~150
℃
℃
Parameter
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc*=25℃
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
700
400
9.0
12
25
6.0
Units
V
V
V
A
A
A
A
W
t
P
=5ms
12
100
Tc :Case temperature (good cooling)
Ta :Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.25
40
Units
℃/W
℃/W
Rev.A Jun.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
