WCMB2016R4X
Electrical Characteristics
Over the Operating Range
WCMB2016R4X
Param-
eter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage Cur-
rent
V
CC
Operating Supply
Current
Automatic CE
Power-Down Current—
CMOS Inputs
Automatic CE
Power-Down Cur-
rent— CMOS Inputs
GND < V
O
< V
CC
, Output Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
Test Conditions
I
OH
=
−0.1
mA
I
OL
= 0.1 mA
V
CC
= 1.65V
V
CC
= 1.65V
Min.
1.4
Typ.
Max.
0.2
Unit
V
V
V
V
µA
µA
mA
mA
1.4
−0.2
−1
−1
1.5
0.5
V
CC
+ 0.2V
0.4
+1
+1
6
2
I
CC
V
CC
= 1.95V
I
OUT
= 0 mA
CMOS levels
I
SB1
CE > V
CC
−0.2V,
V
IN
>Vcc-0.2V, V
IN
<0.2V
f = f
MAX
(Address and Data Only),
f=0 (OE, WE, BHE and BLE)
CE > V
CC
−0.2V
V
IN
> V
CC
−0.2V
or V
IN
< 0.2V,
f = 0, Vcc=1.95V
1
8
µA
I
SB2
Capacitance
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max.
6
8
Unit
pF
pF
Thermal Resistance
Description
Thermal Resistance (Junction
to Ambient)
Thermal Resistance (Junction
to Case)
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed
circuit board
Symbol
Θ
JA
Θ
JC
BGA
55
16
Units
°C/W
°C/W
3
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
