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WCMA2016U4B-FF70 参数 Datasheet PDF下载

WCMA2016U4B-FF70图片预览
型号: WCMA2016U4B-FF70
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16静态RAM [128K x 16 Static RAM]
分类和应用:
文件页数/大小: 12 页 / 239 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
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WCMA2016U4B
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
Typ
10%
GND
Rise TIme: 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall Time: 1 V/ns
Equivalent to:
OUTPUT
THÉ
VENIN EQUIVALENT
R
T H
V
TH
Parameters
R1
R2
R
TH
V
TH
3.0V
1.105
1.550
0.645
1.75
Unit
KOhms
KOhms
KOhms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
t
CDR[5]
t
R[6]
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
V
CC
= 1.5V
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
0
70
Conditions
Min.
1.5
0.5
Typ.
[4]
Max.
V
ccmax
7.5
Unit
V
µA
ns
ns
Data Retention Waveform
[7]
DATA RETENTION MODE
V
CC
CE or
V
CC(min)
t
CDR
V
DR
> 1.5 V
V
CC(min)
t
R
BHE .BLE
Note:
6. Full Device AC operation requires linear V
C C
ramp from V
DR
to V
CC(min.)
> 100
µs
or stable at V
CC(min.)
> 100
µs.
7. BHE.BLE is the AND of both BHE and BLE . Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE .
4