WCFS1008C3E
WCFS1008C9E
AC Test Loads and Waveforms
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
Equivalent to:
R2
255
Ω
R1 480
Ω
R1 480
Ω
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(b)
R2
255
Ω
GND
≤
3 ns
ALL INPUT PULSES
3.0V
90%
10%
90%
10%
≤
3 ns
THÉVENIN EQUIVALENT
167
Ω
1.73V
OUTPUT
Switching Characteristics
Over the Operating Range
WCFS1008C3E
WCFS1008C9E-15
Parameter
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
WRITE CYCLE
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
Write Cycle Time
CE
1
LOW to Write End, CE
2
HIGH to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High
Z
15
12
12
0
0
12
8
0
3
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
1
LOW to Data Valid, CE
2
HIGH to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE
1
LOW to Low Z, CE
2
HIGH to Low Z
CE
1
HIGH to High Z, CE
2
LOW to High Z
CE
1
LOW to Power-Up, CE
2
HIGH to Power-Up
CE
1
HIGH to Power-Down, CE
2
LOW to Power-Down
0
15
3
7
0
7
3
15
7
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min.
Max.
Unit
Note:
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
6. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured
±
500 mV from steady-state voltage.
7. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of
these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of t
HZWE
and t
SD
Page 3 of 8
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
