1021BV33
WCFS1016V1C
64K x 16 Static RAM
Features
•
3.3V operation (3.0V–3.6V)
•
High speed
—
t
AA
= 12 ns
•
CMOS for optimum speed/power
•
Automatic power-down when deselected
•
Independent control of upper and lower bits
•
Available in 400-mil SOJ
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O
9
to I/O
16.
See the
truth table at the back of this data sheet for a complete descrip-
tion of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected
(CE HIGH), the outputs are disabled (OE HIGH), the BHE and
BLE are disabled (BHE, BLE HIGH), or during a write opera-
tion (CE LOW, and WE LOW).
The WCFS1016V1C is available in 400-mil-wide SOJ packag-
es.
Functional Description
The WCFS1016V1C is a high-performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an au-
tomatic power-down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
Logic Block Diagram
DATA IN DRIVERS
Pin Configurations
SOJ
Top View
A
4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
V
CC
V
SS
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
64K x 16
RAM Array
512 X 2048
I/O
1
– I/O
8
I/O
9
– I/O
16
COLUMN DECODER
BHE
WE
CE
OE
BLE
A5
A6
A7
OE
BHE
BLE
I/O16
I/O15
I/O14
I/O13
V
SS
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
ROW DECODER
Selection Guide
WCFS1016V1C-12
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
12
150
5
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
SENSE AMPS
Revised April 19, 2002