V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,00015
4
V
V
1,96
2,17
15
0,05
200
0
1200
0
mA
nA
ꢂ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
90
24
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=64Ohm
Rgoff=64Ohm
226
99
15
600
4
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
pF
0,34
Eoff
0,30
250
Cies
Coss
Crss
QGate
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
25
15
25
pF
Reverse transfer capacitance
Gate charge
pF
15
960
4
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,93
K/W
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,91
1,84
2,35
250
VF
Ir
4
mA
A
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
15
15
600
600
IRRM
trr
5
ns
446
0,76
40
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=64Ohm
4
uC
di(rec)max
/dt
A/ms
mWs
Erec
0,32
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,98
K/W
Thermistor
R25
Tol. ±13%
Tol. ±5%
Tj=25°C
19,1
22
24,9
k ꢂ
Rated resistance
R100
Tj=100°C
Tj=25°C
1411
1486
210
1560
ꢂ
Power dissipation given Epcos-Typ
B-value
P
mW
K
Tj=25°C
4000
B(25/100)
Tol. ±3%
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Revision: 2
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