欢迎访问ic37.com |
会员登录 免费注册
发布采购

V23990-P849-A59-PM 参数 Datasheet PDF下载

V23990-P849-A59-PM图片预览
型号: V23990-P849-A59-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial Drives Embedded Generation]
分类和应用:
文件页数/大小: 20 页 / 1393 K
品牌: VINCOTECH [ VINCOTECH ]
 浏览型号V23990-P849-A59-PM的Datasheet PDF文件第1页浏览型号V23990-P849-A59-PM的Datasheet PDF文件第2页浏览型号V23990-P849-A59-PM的Datasheet PDF文件第4页浏览型号V23990-P849-A59-PM的Datasheet PDF文件第5页浏览型号V23990-P849-A59-PM的Datasheet PDF文件第6页浏览型号V23990-P849-A59-PM的Datasheet PDF文件第7页浏览型号V23990-P849-A59-PM的Datasheet PDF文件第8页浏览型号V23990-P849-A59-PM的Datasheet PDF文件第9页  
V23990-P849-A58/A59/C58/C59-PM  
preliminary datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr(V) or  
VGE(V) or  
IC(A) or IF(A)  
or ID(A)  
VCE(V) or  
T(°C)  
Min  
Max  
VGS(V)  
VDS(V)  
Input Rectifier Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=150°C  
1
1,15  
1,11  
0,91  
0,77  
0,008  
0,011  
1,6  
VF  
Vto  
rt  
Forward voltage  
30  
30  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
0,1  
Ir  
1600  
mA  
Thermal grease  
RthJH  
Thermal resistance chip to heatsink per chip  
thickness50um  
λ = 1 W/mK  
1,66  
K/W  
Transistor Inverter  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
5
5,8  
6,5  
2,35  
0,05  
200  
VGE(th)  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
VCE=VGE  
0,0003  
8
V
V
1,6  
1,87  
2,20  
0
1200  
0
mA  
nA  
20  
none  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
ns  
71  
23  
Rise time  
ns  
td(off)  
tf  
Turn-off delay time  
ns  
Rgon=32Ohm  
Rgoff=32Ohm  
236  
108  
0,75  
15  
600  
8
Fall time  
ns  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
mWs  
pF  
Eoff  
0,62  
490  
Cies  
Coss  
Crss  
QGate  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
50  
30  
53  
pF  
Reverse transfer capacitance  
Gate charge  
pF  
Vcc=600V  
±15  
8
nC  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
2,16  
K/W  
Diode Inverter  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,35  
1,70  
1,66  
2,7  
2,2  
VF  
Irm  
Diode forward voltage  
10  
V
mA  
A
Reverse leakage current  
Peak reverse recovery current  
Reverse recovery time  
1200  
600  
IRRM  
trr  
10  
383  
1,57  
69  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=32Ohm  
15  
10  
uC  
di(rec)max  
/dt  
A/ms  
mWs  
Erec  
0,63  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
2,68  
K/W  
copyright Vincotech  
3
Revision: 2