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V23990-P849-C59-PM 参数 Datasheet PDF下载

V23990-P849-C59-PM图片预览
型号: V23990-P849-C59-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 20 页 / 1305 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P849-A58/A59/C58/C59-PM  
preliminary datasheet  
Output Inverter  
Figure 1  
Output inverter IGBT  
Figure 2  
Output inverter IGBT  
Typical output characteristics  
Typical output characteristics  
I
C = f(VCE  
)
IC = f(VCE)  
32  
32  
24  
16  
8
24  
16  
8
0
0
0
VCE (V)  
VCE (V)  
0
1
2
3
4
5
1
2
3
4
5
At  
At  
tp =  
Tj =  
tp =  
Tj =  
250  
25  
μs  
250  
125  
μs  
°C  
°C  
VGE from 7 V to 17 V in steps of 1 V  
VGE from 7 V to 17 V in steps of 1 V  
Figure 3  
Output inverter IGBT  
Figure 4  
Output inverter FRED  
Typical transfer characteristics  
Typical diode forward current as  
a function of forward voltage  
IF = f(VF)  
Ic = f(VGE  
)
10  
32  
24  
16  
8
125 oC  
25 oC  
8
6
4
2
25 oC  
125 oC  
0
0
0
VF (V)  
VGE (V)  
3
6
9
12  
0
1
2
3
4
At  
At  
tp =  
tp =  
250  
10  
μs  
250  
μs  
VCE  
=
V
copyright Vincotech  
5
Revision: 2