V23990-P849-A58/A59/C58/C59-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Diode Inverter
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
1200
16
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
IFRM
Ptot
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
20
36
A
Th=80°C
Tc=80°C
W
°C
Tjmax
175
Transistor BRC
VCE
IC
Collector-emitter voltage
DC collector current
1200
7
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
Icpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
12
24
A
Th=80°C
Tc=80°C
W
V
±20
tSC
Tj≤150°C
10
μs
VCC
VGE=15V
800
V
Tjmax
Maximum Junction Temperature
150
°C
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
7
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
6
A
Th=80°C
Tc=80°C
18
W
°C
Tjmax
150
Thermal properties
Storage temperature
Operation temperature
Tstg
Tjop
-40…+125
-40…+125
°C
°C
Insulation properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
2
Revision: 2