V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Transistor BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,1
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,0003
8
V
V
1,6
1,87
2,22
0,05
200
0
1200
0
mA
nA
ꢂ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
72
24
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=32Ohm
Rgoff=32Ohm
228
104
0,71
15
600
8
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
pF
Eoff
0,62
490
Cies
Coss
Crss
QGate
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
30
50
pF
Reverse transfer capacitance
Gate charge
pF
Vcc=960V
±15
8
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,36
K/W
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,67
1,61
2,2
VF
Ir
mA
A
250
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
600
IRRM
trr
10
427
1,64
73
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=32Ohm
15
8
mC
A/ms
mWs
di(rec)max
/dt
Erec
0,69
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,15
K/W
Thermistor
R25
Tol. ±13%
Tol. ±5%
Tj=25°C
19,1
22
24,9
Rated resistance
kꢂ
R100
Tj=100°C
Tj=25°C
1411
1486
210
1560
Power dissipation given Epcos-Typ
B-value
P
mW
K
Tj=25°C
4000
B(25/100)
Tol. ±3%
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