V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1
1,22
1,19
0,93
0,81
0,010
0,013
1,9
VF
Vto
rt
Forward voltage
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢂ
0,1
Ir
1600
mA
Thermal grease
RthJH
Thermal resistance chip to heatsink per chip
thickness≤50um
λ = 1 W/mK
2,16
K/W
Transistor Inverter
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,0005
15
V
V
1,94
2,26
0,01
200
0
1200
0
mA
nA
ꢂ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
ns
60
19
Rise time
ns
td(off)
tf
Turn-off delay time
ns
Rgon=16 Ohm
Rgoff=16 Ohm
239
106
1,25
±15
600
15
Fall time
ns
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
mWs
pF
Eoff
1,24
Cies
Coss
Crss
QGate
1000
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
100
56
pF
Reverse transfer capacitance
Gate charge
pF
Vcc=960V
±15
15
93
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,83
K/W
Diode Inverter
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,35
1,90
1,91
2,7
2,35
VF
Irm
Diode forward voltage
10
V
mA
A
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
600
IRRM
trr
16
ns
433
2,75
109
1,16
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=16 Ohm
±15
15
uC
di(rec)max
/dt
A/ms
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,52
K/W
copyright Vincotech
3
Revision: 2
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