V23990-P768-A50-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,1
1,05
0,89
0,78
4
1,8
VF
Vto
rt
Forward voltage
50
50
50
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
5
0,1
Ir
1500
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
0,74
0,49
Phase-Change
Material
K/W
Inverter Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,4
1,4
6
6,6
2,3
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
10
0,005
50
V
V
1,80
2,18
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
300
500
1200
0
µA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
65,4
64,8
9,8
11,6
137
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
189
±15
600
50
58,6
99,8
1,994
3,311
2,564
4,317
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
5000
1000
80
Output capacitance
f=1MHz
0
10
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
600
50
117
nC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,61
0,41
Phase-Change
Material
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,4
1,21
1,2
80
81
156
2,2
VF
IRRM
trr
Diode forward voltage
50
50
V
A
Peak reverse recovery current
Reverse recovery time
ns
470
6,95
12,53
4237
1162
3,314
6,025
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Rgon=8 ꢀ
±15
600
µC
di(rec)max
/dt
A/µs
mWs
Erec
RthJH
RthJC
0,75
0,5
Phase-Change
Material
K/W
copyright Vincotech
4
Revision: 1
VINCOTECH [ VINCOTECH ]
