V23990-P768-A50-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode
Tj=25°C
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
1200
V
A
Th=80°C
Tc=80°C
82
Tj=Tjmax
106
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
100
A
Th=80°C
Tc=80°C
126
191
W
°C
Tjmax
175
Brake Transistor
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
V
A
Th=80°C
Tc=80°C
45
56
Tj=Tjmax
ICpuls
tp limited by Tjmax
VCE ≤ 1200V, Tj ≤ Top max
Tj=Tjmax
Pulsed collector current
135
70
A
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
Th=80°C
Tc=80°C
137
208
Ptot
W
V
VGE
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
175
°C
Brake Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
Tc=25°C
1200
V
A
Th=80°C
Tc=80°C
16
16
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Brake Inverse Diode
20
A
Th=80°C
Tc=80°C
69
98
W
°C
Tjmax
Maximum Junction Temperature
175
Brake Diode
Tj=25°C
1200
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
V
A
Th=80°C
Tc=80°C
28
35
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
50
A
Th=80°C
Tc=80°C
72
W
°C
109
Tjmax
175
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