V23990-P763-A-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
I
C [A] or
V
GE [V] or
IF [A] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Brake IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00043
30
V
V
1,5
1,77
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,14
400
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
96
98
14
Rise time
18
ns
141
170
103
121
0,38
0,51
0,71
0,98
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=16 ꢀ
±15
300
30
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
1630
108
50
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
480
30
167
1,13
0,74
nC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
K/W
Brake Inverse Diode
Tj=25°C
Tj=150°C
1,2
1,85
1,88
2,1
VF
Diode forward voltage
10
V
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,77
1,17
K/W
K/W
Brake FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,66
1,6
2,1
VF
Ir
Diode forward voltage
20
30
V
ꢁA
140
Reverse leakage current
±15
±15
300
300
30
33
22
146
0,47
1,81
4805
2381
0,21
0,42
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=16 ꢀ
30
µC
di(rec)max
/dt
A/µs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,82
1,20
K/W
Thermistor
R25
DR/R
P
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Tol. ±5%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
23,1
kꢀ
%/K
mW
K
R100=1486.1ꢀ
210
4000
B(25/100)
Tol. ±3%
copyright Vincotech
5
Revision: 3
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