V23990-P763-A-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
I
C [A] or
V
GE [V] or
IF [A] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,11
1,04
0,91
0,78
0,004
0,005
1,7
VF
Vto
rt
Forward voltage
50
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢀ
0,05
1,1
Ir
1500
mA
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
0,74
0,49
K/W
Inverter IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,1
VGE(th) VCE=VGE
VCE(sat)
ICES
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
0,0008
50
V
V
1,5
1,7
15
0
0,35
700
600
0
mA
nA
ꢀ
IGES
20
Rgint
td(on)
tr
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
105
106
13
Turn-on delay time
Rise time
17
ns
161
188
105
126
0,49
0,72
1,27
1,81
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
±15
300
50
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
Eoff
Cies
3140
200
90
Coss
Crss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
pF
nC
Reverse transfer capacitance
Gate charge
QGate
RthJH
RthJC
RthJHT-T
RthJHD-T
±15
480
50
310
0,82
0,54
0,12
0,2
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Coupled thermal resistance transistor-transistor
Coupled thermal resistance diode-transistor
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
K/W
Inverter FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,42
1,29
52
76,8
118
2,1
VF
IRRM
trr
Diode forward voltage
50
50
V
A
Peak reverse recovery current
Reverse recovery time
ns
146
2,06
4,37
3668
3903
0,53
0,99
Qrr
Reverse recovered charge
Rgon=8 ꢀ
±15
300
µC
di(rec)max
/dt
Peak rate of fall of recovery current
Reverse recovered energy
A/µs
mWs
Erec
RthJH
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Coupled thermal resistance diode-diode
Coupled thermal resistance transistor-diode
1,12
0,74
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
RthJC
K/W
RthJHD-D
RthJHT-D
0,18
copyright Vincotech
4
Revision: 3
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