V23990-P760-A-PM
V23990-P760-AY-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or IC [A] or
VCE [V] or IF [A] or
DS [V] D [A]
VGE [V] or
Tj
Min
Max
V
GS [V]
V
I
Brake IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,3
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff incl diode
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
0,0017
50
V
V
1,84
2,27
VCE(sat)
ICES
15
0
0,25
700
1200
0
mA
nA
ꢂ
IGES
Rgint
td(on)
tr
20
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
117
121
18
Rise time
24
ns
249
316
88
125
2,39
3,43
2,96
4,8
td(off)
Turnꢀoff delay time
Rgoff=8 ꢂ
±15
600
50
Rgon=8 ꢂ
tf
Fall time
Eon
Eoff
Cies
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
pF
2770
205
160
290
0,6
Coss
Crss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
QGate
RthJH
RthJC
±15
960
nC
Thermal grease
thickness≤50µm
λ = 0,61 W/mꢁK
Thermal resistance chip to heatsink
Thermal resistance chip to case
K/W
0,39
Brake Inverse Diode
Tj=25°C
Tj=150°C
1,1
1,84
1,8
2,1
VF
Diode forward voltage
10
V
Thermal grease
thickness≤50µm
λ = 0,61 W/mꢁK
RthJH
RthJC
Thermal resistance chip to heatsink
Thermal resistance chip to case
1,81
1,20
K/W
K/W
Brake FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,87
1,83
2,2
10
VF
Ir
Diode forward voltage
25
50
V
ꢃA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
±15
±15
600
600
54,29
78,18
158,7
295,4
3,21
6,6
4114
3412
3,21
6,6
IRRM
trr
A
ns
Qrr
µC
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink
Thermal resistance chip to case
Rgon=8 ꢂ
50
di(rec)max
/dt
A/µs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50µm
λ = 0,61 W/mꢁK
1,27
K/W
0,84
Thermistor
R25
Rated resistance
Deviation of R100
Power dissipation given EpcosꢀTyp
Bꢀvalue
Tol. ±5%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
23,1
kꢂ
%/K
mW
K
DR/R
R100=1486.1ꢂ
P
210
4000
B(25/100)
Tol. ±3%
copyright Vincotech
5
21 Jan. 2015 / Revision: 5
VINCOTECH [ VINCOTECH ]
