V23990-P760-A-PM
V23990-P760-AY-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or IC [A] or
VCE [V] or IF [A] or
DS [V] D [A]
VGE [V] or
Tj
Min
Max
V
GS [V]
V
I
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,18
1,16
0,88
0,75
0,003
0,004
1,9
VF
Vto
rt
Forward voltage
100
100
100
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
ꢂ
0,05
1,1
Ir
1500
mA
Thermal grease
thickness≤50µ
m
RthJH
RthJC
Thermal resistance chip to heatsink
Thermal resistance chip to case
0,62
0,41
K/W
λ = 0,61
Inverter IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,5
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. Diode
Gateꢀemitter leakage current
Integrated Gate resistor
0,0034
100
V
V
1,9
2,34
VCE(sat)
ICES
15
0
0,03
700
1200
0
mA
nA
ꢂ
IGES
Rgint
td(on)
tr
20
2
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
126
130
17
Turnꢀon delay time
Rise time
22
ns
242
316
63
115
4,07
6,64
5,22
8,71
td(off)
Turnꢀoff delay time
Rgoff=4 ꢂ
±15
600
100
Rgon=4 ꢂ
tf
Fall time
Eon
Eoff
Cies
Turnꢀon energy loss per pulse
Turnꢀoff energy loss per pulse
Input capacitance
mWs
5540
Coss
Crss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
410
pF
Reverse transfer capacitance
Gate charge
320
QGate
RthJH
RthJC
±15
580
nC
Thermal resistance chip to heatsink
Thermal resistance chip to case
Coupled thermal resistance transistorꢀtransisto
Coupled thermal resistance diodeꢀtransistor
0,36
0,24
0,08
0,08
Thermal grease
thickness≤50µm
λ = 0,61 W/mꢁK
K/W
R
thJHTꢀT
RthJHDꢀT
Inverter FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,83
1,86
167
191
134
2,4
VF
IRRM
trr
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
100
100
V
A
ns
293
9,39
19,67
7887
3332
3,82
8,55
Qrr
µC
Rgon=4 ꢂ
±15
600
di(rec)max
/dt
Peak rate of fall of recovery current
Reverse recovered energy
A/µs
mWs
Erec
RthJH
RthJC
Thermal resistance chip to heatsink
Thermal resistance chip to case
0,63
Thermal grease
thickness≤50µm
0,41
K/W
RthJHDꢀD λ = 0,61 W/mꢁK
RthJHTꢀD
Coupled thermal resistance diodeꢀdiode
Coupled thermal resistance transistorꢀdiode
0,07
copyright Vincotech
4
21 Jan. 2015 / Revision: 5
VINCOTECH [ VINCOTECH ]
