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10-FZ062TA099FH-P980D18 参数 Datasheet PDF下载

10-FZ062TA099FH-P980D18图片预览
型号: 10-FZ062TA099FH-P980D18
PDF下载: 下载PDF文件 查看货源
内容描述: [Vincotech clip-in housing]
分类和应用:
文件页数/大小: 20 页 / 871 K
品牌: VINCOTECH [ VINCOTECH ]
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10-FZ062TA099FH-P980D18/-FH01-P980D28  
datasheet  
PFC  
Figure 5  
PFC MOSFET  
Figure 6  
PFC MOSFET  
Typical switching energy losses  
as a function of collector current  
E = f(I D)  
Typical switching energy losses  
as a function of gate resistor  
E = f(R G)  
0,120  
0,100  
0,080  
0,060  
0,040  
0,020  
0,000  
0,12  
Tj = Tjmax -25°C  
Eon  
Eon  
Eon  
0,10  
Tj =25°C  
Eon  
0,08  
0,06  
0,04  
0,02  
0,00  
Eoff  
Eoff  
Eoff  
Eoff  
0
5
10  
15  
20  
25  
30  
I C (A)  
R G ( )  
18  
0
3
6
9
12  
15  
inductive load  
inductive load  
T j =  
T j =  
25/125  
°C  
V
25/125  
400  
10  
°C  
V
V DS  
V GS  
=
V DS  
V GS  
=
400  
10  
4
=
=
V
V
R gon  
R goff  
=
I D =  
15  
A
=
4
Figure 7  
Typical reverse recovery energy loss  
PFC MOSFET  
Figure 8  
PFC MOSFET  
Typical reverse recovery energy loss  
as a function of gate resistor  
E rec = f(R G)  
as a function of collector (drain) current  
E rec = f(I c)  
0,030  
0,035  
0,030  
0,025  
Tj = 25°C  
Erec  
0,025  
0,020  
Tj = 25°C  
Erec  
Erec  
0,020  
0,015  
Tj = Tjmax -25°C  
0,015  
Tj = Tjmax - 25°C  
Erec  
0,010  
0,005  
0,000  
0,010  
0,005  
0,000  
0
5
10  
15  
20  
25  
I C (A) 30  
0
3
6
9
12  
15 R G  
(
)
18  
inductive load  
inductive load  
T j =  
T j =  
25/125  
°C  
V
25/125  
400  
10  
°C  
V
V DS  
V GS  
=
V DS  
V GS  
=
400  
10  
4
=
=
V
V
R gon  
R goff  
=
I D =  
15  
A
=
4
copyright Vincotech  
7
10 Febr. 2015 / Revision 4