10-FZ062TA099FH-P980D18/-FH01-P980D28
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] or I C [A] or
V GE [V] or
V GS [V]
V CE [V] or I F [A] or
T j
Min
Max
V DS [V]
I D [A]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1,16
1,11
0,9
0,77
9
1,4
V F
V to
r t
30
30
30
V
V
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mΩ
mA
12
0,02
2
I r
1500
Thermal grease
R th(j-s) thickness≤50um
1,72
K/W
Thermal resistance chip to heatsink
λ =1 W/mK
Input Rectifier Thyristor
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
1,25
1,22
0,93
0,82
0,011
0,014
1,6
V F
V to
r t
30
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mΩ
mA
µs
0,05
2
2
I r
800
Ig=0,5A
dig/dt=0,5A/us
Ig=0,2A
dig/dt=0,2A/us
t GD
VD=1/2Vdrm
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
Tj=25°C
Tj=125°C
Tj=125°C
Tj=125°C
Tj=25°C
Tj=25°C
<1
t GR
µs
500
150
(dv /dt )cr
VD=2/3Vdrm
V/µs
A/µs
µs
Ig=0,2A
f=50Hz
VD=2/3Vdrm
tp=200us
(di /dt )cr
VD=2/3Vdrm40
150
t q
100
26
VD=6V
50
90
I H
mA
mA
V
tp=10us
Ig=0,2A
VD=6V
I L
Latching current
Tj=25°C
Tj=-40°C
Tj=25°C
Tj=-40°C
Tj=125°C
1,3
1,6
28
50
0,2
V GT
Gate trigger voltage
VD=6V
11
I GT
mA
V
Gate trigger current
V GD
VD=1/2Vdrm
VD=1/2Vdrm
Gate non-trigger voltage
Gate non-trigger current
Tj=125°C
1
I GD
mA
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(j-s)
K/W
1,57
Thermal resistance chip to heatsink
PFC MOSFET
V (BR)DS
r DS(on)
V (GS)th
I GSS
I DSS
t d(on)
t r
Avalanche breakdown voltage
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
0
0,0003
Tj=25°C
600
2,5
V
mΩ
V
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
111
223
3,0
10
Vds
20
0
18
3,9
200
10
0,0012
0
nA
uA
600
21
21
4
4
71
73
3
3
0,055
0,059
0,008
0,013
ns
t d(off)
t f
Turn off delay time
Rgoff=4 Ω
Rgon=4 Ω
10
400
15
Fall time
E on
Turn-on energy loss
Turn-off energy loss
Total gate charge
mWs
nC
E off
Q GE
Q GS
60
0
0
400
100
18
14
Gate to source charge
Gate to drain charge
Input capacitance
Q GD
C iss
20
2800
130
2,5
C oss
C rss
f=1MHz
Tj=25°C
pF
Output capacitance
Reverse transfer capacitance
Thermal grease
R th(j-s) thickness≤50um
1,13
K/W
Thermal resistance chip to heatsink
λ = 1 W/mK
copyright Vincotech
3
10 Febr. 2015 / Revision 4
VINCOTECH [ VINCOTECH ]
