10-FZ062TA040FB-P984D18/-FB01-P984D28/-FB02-P984D38/-FB03-P984D48
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
VGS [V]
VDS [V]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1.16
1.11
0.9
0.77
9
1.4
VF
Vto
rt
Forward voltage
30
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mΩ
mA
12
0.02
2
Ir
1500
Thermal grease
thickness≤50um
λ =1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1.72
K/W
Input Rectifier Thyristor
Forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
1.25
1.22
0.93
0.82
0.011
0.014
1.6
VF
30
30
30
V
V
Vto
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
rt
Ir
mΩ
mA
μs
0.05
2
2
800
Ig=0,5A
dig/dt=0,5A/us
Ig=0,2A
tGD
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
VD=1/2Vdrm
Tj=25°C
Tj=125°C
Tj=125°C
Tj=125°C
Tj=25°C
Tj=25°C
<1
tGR
μs
dig/dt=0,2A/us
500
150
(dv/dt)cr
(di/dt)cr
tq
VD=2/3Vdrm
V/μs
A/μs
μs
Ig=0,2A
f=50Hz
VD=2/3Vdrm
tp=200us
VD=6V
VD=2/3Vdrm40
150
100
26
50
90
IH
mA
mA
V
tp=10us
Ig=0,2A
VD=6V
IL
Latching current
Tj=25°C
Tj=-40°C
Tj=25°C
Tj=-40°C
Tj=125°C
1.3
1.6
28
50
0.2
VGT
IGT
Gate trigger voltage
VD=6V
11
Gate trigger current
mA
V
VGD
IGD
Gate non-trigger voltage
Gate non-trigger current
VD=1/2Vdrm
VD=1/2Vdrm
Tj=125°C
1
mA
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1.57
4
K/W
PFC IGBT
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3
5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Vce
0.002
50
V
V
2.74
3.25
3.3
40
0.2
0
600
0
uA
uA
Ω
3.25
20
n.a.
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
22
22.6
14
Rise time
14.6
ns
327.6
354.2
9.4
td(off)
tf
Turn-off delay time
Rgoff=8Ω
Rgon=8Ω
15
400
30
Fall time
11.1
0.5052
0.7837
0.7981
0.968
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
2572
245
158
158
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
480
50
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0.99
K/W
Copyright by Vincotech
3
Revision: 2
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