10-FZ062TA040FB-P984D18/-FB01-P984D28/-FB02-P984D38/-FB03-P984D48
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC IGBT
VCE
IC
ICpulse
Ptot
Collector-emitter break down voltage
DC collector current
600
27
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
150
71
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
Th=80°C
Tc=80°C
W
V
VGE
+/- 20
tSC
Tj≤150°C
10
μs
VCC
VGE=15V
600
V
Tjmax
Maximum Junction Temperature
150
°C
C.T. Inverse diode
VRRM
IF
IFRM
Ptot
Tj=25°C
Peak Repetitive Reverse Voltage
DC forward current
600
8
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
16
14
tp limited by Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
Th=80°C
Tc=80°C
Tj=Tjmax
W
°C
Tjmax
175
PFC Diode
VRRM
IF
IFRM
Ptot
Tj=25°C
Peak Repetitive Reverse Voltage
DC forward current
600
25
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
50
37
tp limited by Tjmax
Repetitive peak forward current
Power dissipation
A
Th=80°C
Tc=80°C
Tj=Tjmax
W
°C
Tjmax
Maximum Junction Temperature
600
PFC Shunt
IF
Tc=25°C
Tc=25°C
DC forward current
Power dissipation per Shunt
44.7
10
A
Ptot
W
DC link Capacitor
VMAX
Tc=25°C
Max.DC voltage
500
V
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
Copyright by Vincotech
2
Revision: 2