UB09N65
機密
第 4 頁
2011-03-08
- 4 -
N-Ch 650V Fast Switching MOSFETs
10000
100.00
10.00
1.00
F=1.0MHz
10us
1000
100
10
Ciss
100us
Coss
10ms
100ms
DC
0.10
T =25
℃
Crss
C
Single Pulse
1
0.01
1
5
9
13
17
21
25
0.1
1
10
100
1000
10000
VDS , Drain to Source Voltage (V)
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
TON
0.02
T
D = TON/T
0.01
SINGLE PULSE
TJpeak = TC + PDM x RθJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4