UB09N65
機密
第 2 頁
2011-03-08
- 2 -
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (10V)
Gate-Source Charge
Conditions
VGS=0V , ID=250uA
Min.
650
---
---
2
Typ.
---
Max.
---
Unit
V
BVDSS
△BVDSS/△TJ
Reference to 25℃, ID=1mA
0.7
0.95
---
---
V/℃
Ω
RDS(ON)
VGS(th)
△VGS(th)
IDSS
VGS=10V , ID=2.75A
1.1
5
V
VGS=VDS , ID =250uA
---
---
---
---
---
---
---
---
---
---
---
---
---
---
-8.9
---
---
mV/℃
uA
VDS=520V , VGS=0V , TJ=25℃
2
VGS=±30V , VDS=0V
IGSS
gfs
---
±100
---
nA
VDS=10V , ID=2.75A
7
S
Qg
33
---
VDS=520V , VGS=10V , ID=1A
nC
ns
Qgs
9.5
9.8
19
---
Qgd
Gate-Drain Charge
---
Td(on)
Tr
Turn-On Delay Time
---
VDD=300V , VGS=10V , RG=10Ω,
Rise Time
19.4
56.4
38
---
ID=1A
Td(off)
Tf
Turn-Off Delay Time
---
Fall Time
---
Ciss
Input Capacitance
1538
100
1.9
---
VDS=25V , VGS=0V , F=1MHz
pF
Coss
Crss
Output Capacitance
---
Reverse Transfer Capacitance
---
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
6.6
---
---
mJ
VDD=50V , L=1mH , IAS=3.5A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
9
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
18
1
A
VGS=0V , IS=1A , TJ=25℃
---
---
V
---
158
677
---
---
nS
nC
IF=1A , dI/dt=100A/µs , TJ=25℃
Qrr
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=8A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
