CHK025A-SOA
25W Power Packaged Transistor
Recommended DC Operating Ratings
Tcase= +25°C
Symbol
VDS
Parameter
Min
Typ
Max Unit
Conditions
Drain to Source Voltage
Gate to Source Voltage
Quiescent Drain Current
Drain Current
20
50
V
V
A
A
VGS_Q
ID_Q
-1.9
0.2
1.3
VD=50V, ID_Q=200mA
VD=50V
0.65
(1)
ID_MAX
VD=50V,
Compressed mode
IG_MAX
Tj_MAX
Gate Current (forward
mode)
0
16
mA Compressed mode
Junction temperature
200
°C
(1) Limited by dissipated power
DC Characteristics
Tcase= +25°C
Symbol
VP
Parameter
Min
Typ
-2
5.4 (1)
Max Unit
Conditions
VD=50V, ID= IDSS /100
VD=7V, VG=2V
Pinch-Off Voltage
-3
-1
V
A
ID_SAT
IG_leak
Saturated Drain Current
Gate Leakage Current
(reverse mode)
-2
mA VD=50V, VG=-7V
VBDS
Drain-Source
Break-down Voltage
200
3.7
V
VG=-7V, ID=20mA
°C/W
RTH
Thermal Resistance
(1) For information, limited by ID_MAX , see on Absolute Maximum Ratings
RF Characteristics (CW)
Tcase= +25°C, CW mode, F = 4GHz, VDS=50V, ID_Q=200mA
Symbol
GSS
Parameter
Small Signal Gain
Min
14
Typ
16
Max
Unit
dB
W
-
-
-
-
PSAT
Saturated Output Power
28
35
PAE
Max Power Added Efficiency
50
55
%
GPAE_MAX Associated Gain at Max PAE
12
dB
Ref. : DSCHK025ASOA3021 - 21 Jan 13
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
