X-band High Power Amplifier
CHA7115-99F
Bonding recommendations
Port
IN
Connection
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (550µm max)
External capacitor
Inductance (Lbonding) = 0.3nH
2 gold wires with diameter of 25µm (550µm max)
OUT
C1 ~ 100pF, C2 ~ 10nF
C1 ~ 100pF
Vg
Vd
Inductance 1nH
Inductance 1nH
Assembly recommendations in test fixture
Vg
Vd
Vg
Vd
C1=100pF
C2=10nF
Non capacitive pad
Ordering Information
Chip form
:
CHA7115-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref DSCHA71151069 - 10 Mar 11
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Specifications subject to change without notice
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UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
