X-band High Power Amplifier
CHA7115-99F
Electrical Characteristics on wafer
Tamb = 20°C, Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Operating frequency
Min
Typ
Max
Unit
GHz
dB
dB
dB
dBm
%
Fop
8.5
11.5
G
Small signal gain
27.5
10
RLin
Input Return Loss
RLout
P_4dBc
PAE_4dB
Id_4dB
Vd1, Vd2, Vd3
Id
Output Return Loss
12
Output power @ 4dBcomp (2)
Power Added Efficiency @ 4dBcomp
Supply drain current @ 4dBcomp
Drain supply voltage (2)
Supply quiescent current (1)
Gate supply voltage
39
37
2.6
8
A
V
2.2
-1.4
A
Vg
V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings).
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vd
Parameter
Compression level (2)
Values
Unit
dB
V
6
Supply voltage (3)
10
2.8
Id
Supply quiescent current
Supply current in saturation
Supply voltage
A
Id_sat
Vg
4
A
-0.8
V
Tj
Maximum junction temperature
Storage temperature range
Operating temperature range
175
°C
°C
°C
Tstg
Top
-55 to +150
-40 to +80
(1)
(2)
(3)
Operation of this device above anyone of these parameters may cause permanent
damage.
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBc.
Without RF input power.
Ref DSCHA71151069 - 10 Mar 11
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
