17-24GHz Medium Power Amplifier
CHA5350-99F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd1,2,3,4
Id
Parameter
Values
8V
Unit
V
Drain bias voltage
Drain bias current (1)
Gate bias voltage
650
mA
V
Vg
-2 to -0.3
+15
Pin
Maximum peak input power overdrive (2)
Junction temperature
dBm
°C
Tj
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vg
Pad No
10
Parameter
Values
-0.7
6
Unit
V
DC gate Voltage
DC drain Voltage
DC Drain current controlled with Vg (1)
Vd1,2,3,4
Id
3, 5, 7
V
300
mA
(1) To be adjusted in order to achieve Id: 300mA
Ref. : DSCHA53503018 - 18 Jan 13
3/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
