CHA5350-99F
17-24GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd1,2,3,4 = +6V, Idq = 300mA
Symbol
Freq
Parameter
Frequency range
Min
Typ
Max
Unit
GHz
dB
17
24
Gain
Linear Gain
26
-0.035
-17
Gain_T
RLin
Linear gain variation versus temperature
Input Return Loss
dB/°C
dB
RLout
P-1dB
Output Return Loss
-12
dBm
dBm
dBm
%
Output Power @1dB gain compression
Saturated output power
26.5
27
Psat
PAE_ P-1dB Power added efficiency @1dB gain comp.
25
Id_ P-1dB
Id_ Psat
Drain current @1dB gain compression
Drain current @ saturation
350
400
mA
mA
Output third order interception point on the
frequency range 17-21 GHz
35.5
34
dBm
dBm
OIP3
Output third order interception point on the
frequency range 21-24 GHz
Vd1,2,3,4
Id
Drain supply voltage
Drain quiescent current
Gate supply voltage
6
V
mA
V
300
-0.7
Vg
These values are representative of measurements in test fixture that are made with bonding
wires at the RF ports.
Wire bonding at RF accesses: 0.3nH, typically.
Ref. : DSCHA53503018 - 18 Jan 13
2/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
