CHA5056
17-27GHz High Power Amplifier
Note: Supply feed might be capacitively bypassed.
25µm diameter gold wire is to be prefered.
DC Pads Size: 114/114 µm, RF Pads Size: 129/204 µm, Chip thickness: 100 µm.
RF wire bonding length: 700µm max
To VD1, 2 DC
Gate supply
To VD3 DC
Drain supply
10nF
10nF
120pF
120pF
120pF
120pF
10nF
120pF
10nF
120pF
10nF
To VG1, 2 DC
Gate supply
To VG3 DC Gate
supply
To VD3 DC Gate
supply
Ref: DSCHA50567211 - 30 Jul 07
7/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
