CHA5056
17-27GHz High Power Amplifier
Typical Measured Performance
Pulsed On wafer measurement (without bonding wires at the RF ports)
Tamb = +25°C, Vd = +4.5V, Small Signal Id = 890mA
Linear Gain & P1dB & Psat versus Frequency
32
30
28
26
24
22
20
18
16
Linear Gain (dB)
P1dB (dBm)
22
Psat (dBm)
24
14
16
17
18
19
20
21
23
25
26
27
28
Frequency (GHz)
Gain & Pout versus Pin @Freq=17GHz
32
30
28
26
24
22
20
18
16
14
12
10
8
Gain (dB)
Pout (dBm)
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Pin (dBm)
Ref: DSCHA50567211 - 30 Jul 07
3/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
