23-34GHz High Power Amplifier
CHA4042
Predicted Output Power at 1-dB Gain Compression
28
27
26
25
24
23
22
21
20
19
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
Absolute Maximum Ratings
amb = 25 °C (1)
T
Symbol
Vds
Ids
Parameter
Values
Unit
V
Drain bias voltage_small signal
Drain bias current_small signal
Gate bias voltage
6.25
450
mA
V
Vgs
Vdg
Pin
-2 to +0.4
+8
Maximum Drain Gate voltage (Vd-Vg)
Maximum peak input power overdrive (2)
Operating Temperature Range (3)
Storage Temperature Range
V
+15
dBm
C
Ta
-45 to +80
-55 to +125
Tstg
C
•
Operation of this device above any one of these parameters may cause
permanent damage.
•
•
Duration < 1 s
AuSn solder mount to CuW or CuMo carrier assumed
Ref. : DSCHA40422218 -06-Aug.-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
