12.5-30GHz Low Noise Amplifier
CHA3689-99F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
4.5V
Unit
V
Drain bias voltage
RF input power
Pin
+10
dBm
°C
Tj
Junction temperature
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +155
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd1
Vd2
Vd3
B
Parameter
Values
Unit
V
DC Drain voltage
DC Drain voltage
DC Drain voltage
DC Gate voltage
DC Gate voltage
4
4
4
V
V
Connected to
ground or not
D
Ref. : DSCHA36891035 - 07 Feb 11
3/16
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
