CHA3689-99F
12.5-30GHz Low Noise Amplifier
Main Characteristics (low current configuration)
Tamb = +25°C, Vd1=Vd2=Vd3= +4V Pads B, D = not connected
Symbol
Freq
Parameter
Min
Typ
Max
Unit
Frequency range
12.5
23
20
30
GHz
dB
dB
Gain
Gain (12.5 - 24GHz)
Gain (24.5 - 30GHz)
26
22
G
NF
Gain flatness (12.5 - 24GHz)
Gain flatness (24.5 - 30GHz)
±2.5
±2
dB
dB
Noise figure (12.5 - 24GHz)
Noise figure (24.5 - 30GHz)
1.8
2.0
2.3
2.5
dB
dB
S11
Input return loss (12.5 - 16GHz) (27 - 30GHz)
Input return loss (16 - 27GHz)
3.0:1
2.0:1
3.5:1
2.5:1
dB
dB
S22
OIP3
P1dB
Id
Output return loss
2.5:1
24
3.0:1
120
dB
dBm
dBm
mA
V
3rd order intercept point (18 – 30GHz)
Output power at 1dB gain compression
Drain bias current
23
13
14
90
Vd
Drain bias voltage
4
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Main Characteristics (high current configuration)
Tamb = +25°C, Vd1=Vd2=Vd3= +4V Pads B, D = GND
Symbol
Freq
Parameter
Min
Typ
Max
Unit
Frequency range
12.5
30
GHz
Gain
Gain (12.5 - 24GHz)
Gain (24.5 - 30GHz)
24
21
27
23
dB
dB
G
NF
Gain flatness (12.5 - 24GHz)
Gain flatness (24.5 - 30GHz)
±2.5
±2
dB
dB
Noise figure (12.5 - 24GHz)
Noise figure (24.5 - 30GHz)
1.9
2.1
2.4
2.6
dB
dB
S11
Input return loss (12.5 - 16GHz) (27 - 30GHz)
Input return loss (16 - 27GHz)
Output return loss
3.0:1
2.0:1
2.5:1
3.5:1
2.5:1
3.0:1
dB
dB
dB
S22
OIP3
P1dB
Id
3rd order intercept point (18 – 30GHz)
Output power at 1dB gain compression
Drain bias current
25
14
26
15
120
4
dBm
dBm
mA
V
150
Vd
Drain bias voltage
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Ref. : DSCHA36891035 - 07 Feb 11
2/16
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
