2-18GHz Low Noise Amplifier
CHA3218-99F
Mechanical data
1 465
2
3
4
5
6
7
8
9
905
770
630
910
770
630
1
10
000
3 070
Chip thickness: 100µm.
Chip size: 3070x1570 ±35µm
All dimensions are in micrometers
RF pads (1, 10)
= 100 x 122µm²
DC pads (2, 4, 6, 8) = 100 x 100µm²
Pin number
Pin name
Description
Input RF
1
2, 4,
IN
VG1, VG2
VD1, VD2
GND
Gate supply voltage
Drain supply voltage
Ground (no bonding required)
Output RF
6, 8
3, 5, 7, 9
10
OUT
Ref. : DSCHA32181157 - 06 Jun 11
7/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
