2-18GHz Low Noise Amplifier
CHA3218-99F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
6V
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
200
mA
V
Vg
-2 to -0.3
175
Tj
Junction temperature (2)
°C
°C
°C
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd
Pad No
Parameter
Drain supply voltage
Values
4
Unit
V
VD1, VD2
VG1, VG2
Vg
Gate supply voltage
-0.45
V
Ref. : DSCHA32181157 - 06 Jun 11
3/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
