CHA3080-98F
71-76GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = Dc = 3.5V, Id (quiescent) = 280mA
Symbol
Freq
Gain
P1dB
Psat
Parameter
Frequency range
Min
Typ
Max
Unit
GHz
dB
71
76
Linear Gain
16
19
21
20
Output power @ 1dB compression
Saturated Output Power
Detection dynamic range (for output
power detection up to Psat)
dBm
dBm
dB
Dr
Vdetect
Voltage detection Vref-Vdet up to
Psat
50
to
mV
1400
RLin
RLout
Input Return Loss
Output Return Loss
12
12
10
dB
dB
dB
Gain ctrl
Gain control range with Vg1&Vg2
tuning (with Vd fixed at 3.5V)
NF
Noise Figure
4.3
3.5
dB
V
Vd1, Vd2h, Vd3h, Drain supply voltage
Vd2b, Vd3b
Id
Supply quiescent current
Gate supply voltage
280
mA
V
Vg1, Vg2, Vg3b,
Vg3h
0.15
Dc
Detector supply voltage
Detector bias current
3.5
V
IDc
240
µA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports but with 10kΩ resistor in parallel on pads Vdet and Vref.
A ribbon (75µm wide) connection at the input and the output of the MMIC amplifier (See
chapter recommended chip assembly) should improve the performances.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
4V
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
350
mA
V
Vg
-2 to +0.4
+12
Pin
Tj
Maximum continuous input power
Junction temperature
dBm
°C
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : DSCHA30803245 - 02 Sep 13
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
