2-22GHz LNA with AGC
CHA3024-QGG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
7V
Unit
V
Drain bias voltage
Idq
Drain bias current
190
mA
V
Vg1
Vg2
Pin
Gate bias voltage Vg1
-2 to 1
-2 to 2
15
Gate bias voltage Vg2
V
Maximum CW input power overdrive
Operating temperature range (chip backside)
Storage temperature range
dBm
°C
°C
Ta
-40 to 85
-55 to +150
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage: these maximum ratings parameters could not be cumulated.
These are stress ratings only, and functional operation of the device at these conditions is
not implied.
Ref. : DSCHA3024-QGG-4346 - 12 Dec 14
3/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
